| PART |
Description |
Maker |
| NX6308GH NX6308GH-15 |
1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION
|
Renesas Electronics Corporation
|
| NX6309GH NX6309GH-15 |
1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION
|
Renesas Electronics Corporation
|
| NX5310EK-AZ NX5310 NX5310EH-AZ NX531006 |
1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, FTTH InGaAsP MQW-FP LASER DIODE
|
CEL[California Eastern Labs]
|
| NX6410GH |
LASER DIODE 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION
|
Renesas Electronics Corporation
|
| NX6314EH |
LASER DIODE 1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH P2P AND 3 Gb/s BTS
|
Renesas Electronics Corporation
|
| ZVN4525G ZVN4525GTA ZVN4525GTC |
PNP 30CM DIFF W/ADJ RoHS Compliant: Yes 310 mA, 250 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
250V N-CHANNEL ENHANCEMENT MODE MOSFET 310 mA, 250 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
N-channel MOSFET
|
Zetex Semiconductor PLC
Diodes Incorporated
ZETEX[Zetex Semiconductors]
|
| DS1863 |
Burst Mode PON Controller
|
Maxim Integrated Products
|
| NX5310EK-AZ NX5310EH-AZ NX5310 |
NECs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR 155 Mb/s, 622 Mb/s, 1.25 Gb/S AND FTTH APPLICATIONS
|
CEL[California Eastern Labs]
|
| FTM-9412P-F20F |
2x5 SFF GE-PON ONU Transceiver
|
Fiberxon
|
| DS1863 DS1863ETR |
Burst-Mode PON Controller With Integrated Monitoring
|
Maxim Integrated Products
|
